Author Affiliations
Abstract
1 College of Electronics and Information Engineering, Tongji University, Shanghai 201804, China
2 Huaxing Infrared Device Company, Xi’an 712099, China
3 Hamamatsu Photonics K. K., 5000 Hirakuchi, Hamakita 434-8601, Japan
Uncooled InAsSb photoconductors were fabricated. The photoconductors were based on InAs0.09Sb0.91and InAs0.09Sb0.91thick epilayers grown on InAs substrates by melt epitaxy (ME). Ge immersion lenses were set on the photoconductors. The cutoff wavelength of InAs0.09Sb0.91detectors is obviously extended to 11.5 μm, and that of InAs0.09Sb0.95detectors is 8.3 μm. At room temperature, the peak detectivity of Dλp* at wavelength of 6.8 μm and modulation frequency of 1 200 Hz is 1.08×109cm·Hz1/2·W-1 for InAs0.09Sb0.91photoconductors, the detectivity D* at wavelength of 9 μm is 7.56×108cm·Hz1/2·W-1, and that at 11 μm is 3.92×108cm·Hz1/2·W-1. The detectivity of InAs0.09Sb0.91detectors at the wavelengths longer than 9 μm is about one order of magnitude higher than that of InAs0.09Sb0.95detectors, which rises from the increase of arsenic (As) composition in InAs0.09Sb0.91materials.
光电子快报（英文版）
2015, 11(5): 352
为了获得p-型的长波长InAsSb材料并研究掺杂剂Ge对材料特性的影响，用熔体外延法生长了掺Ge的波长为12 μm的p型-InAsSb 外延层.用傅里叶红外光谱仪、Van der Pauw 法和电子探针微分析研究了材料的透射光谱、电学性质以及组分的分布.结果表明,两性杂质Ge在熔体外延生长的InAs0.04Sb0.96材料中起受主杂质作用.当外延层的组分相同时，材料的截止波长不随掺Ge浓度的变化而变化，但是随着外延层中掺Ge量的增加，外延层的透射率下降.掺杂原子Ge在外延层的表面及生长方向的分布都是相当均匀的.77 K下测得，载流子浓度为9.18×1016 cm－3的掺Ge的p型-InAs0.04Sb0.96样品，其空穴迁移率达到1 120 cm2·Vs－1.
p-型 截止波长 空穴迁移率 组分分布 InAsSb InAsSb p-type Cutoff wavelength Hole mobility Composition distribution
